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Rongming Chu
Rongming Chu
Zweryfikowany adres z psu.edu
Tytuł
Cytowane przez
Cytowane przez
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
6942018
1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance
R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ...
IEEE Electron Device Letters 32 (5), 632-634, 2011
3972011
Reverse side engineered III-nitride devices
R Chu, U Mishra, RK Lal
US Patent 8,389,977, 2013
2532013
Semiconductor heterostructure diodes
Y Wu, U Mishra, P Parikh, R Chu, I Ben-Yaacov, L Shen
US Patent 7,898,004, 2011
1962011
Semiconductor devices with field plates
R Chu, R Coffie
US Patent 8,390,000, 2013
1342013
AlGaN-GaN double-channel HEMTs
R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau
IEEE Transactions on electron devices 52 (4), 438-446, 2005
1252005
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
Y Cao, R Chu, R Li, M Chen, R Chang, B Hughes
Applied Physics Letters 108 (6), 062103, 2016
1122016
600 V/ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
R Li, Y Cao, M Chen, R Chu
IEEE Electron Device Letters 37 (11), 1466-1469, 2016
1092016
III-nitride devices and circuits
Y Wu, R Chu
US Patent 7,884,394, 2011
1022011
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition
S Keller, CS Suh, Z Chen, R Chu, S Rajan, NA Fichtenbaum, M Furukawa, ...
Journal of Applied Physics 103 (3), 033708, 2008
1022008
An experimental demonstration of GaN CMOS technology
R Chu, Y Cao, M Chen, R Li, D Zehnder
IEEE Electron Device Letters 37 (3), 269-271, 2016
1002016
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
G Koblmüller, RM Chu, A Raman, UK Mishra, JS Speck
Journal of Applied Physics 107 (4), 043527, 2010
782010
Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz
Y Pei, R Chu, NA Fichtenbaum, Z Chen, D Brown, L Shen, S Keller, ...
Japanese Journal of Applied Physics 46 (12L), L1087, 2007
752007
Impact of Plasma Treatment on GaN
R Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, ...
IEEE electron device letters 28 (9), 781-783, 2007
722007
V-gate GaN HEMTs with engineered buffer for normally off operation
R Chu, Z Chen, SP DenBaars, UK Mishra
IEEE Electron Device Letters 29 (11), 1184-1186, 2008
702008
Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts
R Chu, L Shen, N Fichtenbaum, D Brown, S Keller, UK Mishra
IEEE electron device letters 29 (4), 297-299, 2008
672008
Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs
J Liu, Y Zhou, R Chu, Y Cai, KJ Chen, KM Lau
IEEE electron device letters 26 (3), 145-147, 2005
662005
GaN power electronics for automotive application
KS Boutros, R Chu, B Hughes
2012 IEEE Energytech, 1-4, 2012
582012
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
S Keller, CS Suh, NA Fichtenbaum, M Furukawa, R Chu, Z Chen, ...
Journal of Applied Physics 104 (9), 093510, 2008
572008
V-gate GaN HEMTs for X-band power applications
R Chu, L Shen, N Fichtenbaum, D Brown, Z Chen, S Keller, SP DenBaars, ...
IEEE electron device letters 29 (9), 974-976, 2008
532008
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