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Som Mondal
Som Mondal
TERI School of Advanced Studies
Verified email at iitb.ac.in
Title
Cited by
Cited by
Year
Energy rating estimation of PV module technologies for different climatic conditions
B Bora, R Kumar, OS Sastry, B Prasad, S Mondal, AK Tripathi
Solar Energy 174, 901-911, 2018
312018
Optical study of ZnS nano spheres with varying amount of ethylenediamine for photovoltaic application
A Pattnaik, M Tomar, V Gupta, B Prasad, S Mondal
Integrated Ferroelectrics 194 (1), 135-144, 2018
72018
Deep Diffusion of Phosphorus in Silicon using Microsecond-pulsed Laser Doping
S Mondal, CS Solanki
Materials Science in Semiconductor Processing 59, 10-17, 2017
72017
Optimization and fabrication of rear surface passivated c-Si solar cells on 156 cm2 area with local point contacts made by microsecond-pulsed laser firing
S Mondal, A Soman, A Antony
Solar Energy 158, 360-366, 2017
62017
Improving the quantum efficiency of the monocrystalline silicon solar cell using erbium-doped zinc sulphide nanophosphor in downshift layer
S Jha, M Tomar, V Gupta, B Prasad, S Mondal
Materials Research Express 5 (9), 095014, 2018
42018
Diffused bulk channels instead of laser drilled via-holes in emitter wrap-through solar cell structure: A simulation study
S Mondal, P Thakur, CS Solanki
Solar Energy 96, 119-127, 2013
32013
DMD Plasmonic Anti-Reflector for Next-Generation Thin c-Si Solar Cell Applications
HK Singh, S Mondal, B Arunachalam, A Soman, P Sharma, CS Solanki
Plasmonics 13 (2), 705-714, 2018
22018
Laser fired ohmic contacts in Silicon using pulse modulated CW Laser
A Kumar, S Mondal, A Soman, A Antony
IEEE International Conference on Emerging Electronics, 2014
22014
Enhancement in Power Conversion Efficiency of Multi-crystalline Silicon Solar Cell by ZnS Nano Particles with PMMA
A Pattnaik, M Tomar, S Mondal, V Gupta, B Prasad
International Workshop on the Physics of Semiconductor and Devices, 399-405, 2017
12017
SOLAR CELL HAVING THREE DIMENSIONAL JUNCTIONS AND A METHOD OF FORMING THE SAME
SC Singh, S Mondal, INDIAN INSTITUTE OF TECHNOLOGY, BOMBAY
US Patent 20,130,284,248, 2013
12013
Junction depth estimation using wet chemical etching for deep junction fabricated by laser doping
S Mondal, VK Bajpai, CS Solanki
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 1441-1444, 2013
12013
Characterization of Deep Junction Fabricated by Laser Doping Using Internal Quantum Efficiency
S Mondal, CS Solanki
Energy Procedia 54, 734-739, 2014
2014
Deep Diffusion of Phosphorous in Silicon Using 1070 nm Laser
S Mondal, CS Solanki
EU PVSEC, 2014
2014
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