Yuchao Yang
Cytowane przez
Cytowane przez
Observation of conducting filament growth in nanoscale resistive memories
Y Yang, P Gao, S Gaba, T Chang, X Pan, W Lu
Nature communications 3, 732, 2012
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
YC Yang, F Pan, Q Liu, M Liu, F Zeng
Nano letters 9 (4), 1636-1643, 2009
Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
F Pan, C Song, XJ Liu, YC Yang, F Zeng
Materials Science and Engineering: R: Reports 62 (1), 1-35, 2008
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ...
Nature communications 5, 4232, 2014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics
J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ...
Advanced Materials 30, 1800195, 2018
Nanoscale resistive switching devices: mechanisms and modeling
Y Yang, W Lu
Nanoscale 5 (21), 10076-10092, 2013
Giant piezoelectric coefficient in ferroelectric vanadium doped ZnO films
YC Yang, C Song, XH Wang, F Zeng, F Pan
Applied Physics Letters 92 (1), 012907, 2008
Complementary resistive switching in tantalum oxide-based resistive memory devices
Y Yang, P Sheridan, W Lu
Applied Physics Letters 100 (20), 203112, 2012
Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing
Z Wang, M Yin, T Zhang, Y Cai, Y Wang, Y Yang, R Huang
Nanoscale 8, 14015-14022, 2016
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
PAN Feng, C Chao, Z Wang, Y Yang, Y Jing, Z Fei
Progress in Natural Science: Materials International 20, 1-15, 2010
Oxide heterostructure resistive memory
Y Yang, SH Choi, W Lu
Nano letters 13 (6), 2908-2915, 2013
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
C Chen, YC Yang, F Zeng, F Pan
Applied Physics Letters 97 (8), 083502, 2010
Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity
Y Yang, B Chen, WD Lu
Advanced Materials 27 (47), 7720-7727, 2015
Probing nanoscale oxygen ion motion in memristive systems
Y Yang, X Zhang, L Qin, Q Zeng, X Qiu, R Huang
Nature communications 8 (1), 1-10, 2017
Nonvolatile resistive switching in single crystalline ZnO nanowires
Y Yang, X Zhang, M Gao, F Zeng, W Zhou, S Xie, F Pan
Nanoscale 3 (4), 1917-1921, 2011
Building neuromorphic circuits with memristive devices
T Chang, Y Yang, W Lu
IEEE Circuits and Systems Magazine 13 (2), 56-73, 2013
Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: from carrier trapping/detrapping to electrochemical metallization
YC Yang, F Pan, F Zeng, M Liu
Journal of Applied Physics 106 (12), 123705, 2009
Random telegraph noise and resistance switching analysis of oxide based resistive memory
S Choi, Y Yang, W Lu
Nanoscale 6 (1), 400-404, 2014
Bipolar resistance switching in high-performance Cu/ZnO: Mn/Pt nonvolatile memories: active region and influence of Joule heating
YC Yang, F Pan, F Zeng
New Journal of Physics 12 (2), 023008, 2010
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