Marek Osinski
Cited by
Cited by
Diode lasers and photonic integrated circuits
LA Coldren, SW Corzine, ML Mashanovitch
John Wiley & Sons, 2012
Linewidth broadening factor in semiconductor lasers--An overview
M Osinski, J Buus
IEEE Journal of Quantum Electronics 23 (1), 9-29, 1987
“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
PG Eliseev, P Perlin, J Lee, M Osiński
Applied physics letters 71 (5), 569-571, 1997
Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes
P Perlin, M Osiński, PG Eliseev, VA Smagley, J Mu, M Banas, P Sartori
Applied physics letters 69 (12), 1680-1682, 1996
Resonant periodic gain surface-emitting semiconductor lasers
MYA Raja, SRJ Brueck, M Osinski, CF Schaus, JG McInerney, ...
IEEE Journal of Quantum Electronics 25 (6), 1500-1512, 1989
Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
M Mahbobzadeh, MA Osinski
US Patent 5,052,016, 1991
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
P Perlin, V Iota, BA Weinstein, P Wi¶niewski, T Suski, PG Eliseev, ...
Applied physics letters 70 (22), 2993-2995, 1997
Reformulation of the coupled-mode theory of multiwaveguide systems
W Streifer, M Osinski, A Hardy
Journal of lightwave technology 5 (1), 1-4, 1987
Thermal properties of etched-well surface-emitting semiconductor lasers
W Nakwaski, M Osinski
IEEE journal of quantum electronics 27 (6), 1391-1401, 1991
AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
M Osiński, J Zeller, PC Chiu, B Scott Phillips, DL Barton
Applied physics letters 69 (7), 898-900, 1996
Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
PG Eliseev, M Osin’ski, H Li, IV Akimova
Applied Physics Letters 75 (24), 3838-3840, 1999
Single-quantum well InGaN green light emitting diode degradation under high electrical stress
DL Barton, M Osinski, P Perlin, PG Eliseev, J Lee
Microelectronics Reliability 39 (8), 1219-1227, 1999
Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays
W Nakwaski, M Osinski
Electronics Letters 28 (6), 572-574, 1992
Band-tail model and temperature-induced blue-shift in photoluminescence spectra of In x Ga 1-x N grown on sapphire
PG Eliseev, M Osinski, J Lee, T Sugahara, S Sakai
Journal of Electronic Materials 29 (3), 332-341, 2000
Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes
DL Barton, M Osinski, P Perlin, CJ Helms, NH Berg
1997 IEEE International Reliability Physics Symposium Proceedings. 35th …, 1997
Magnetically responsive nanoparticles for drug delivery applications using low magnetic field strengths
SL McGill, CL Cuylear, NL Adolphi, M Osinski, HDC Smyth
IEEE transactions on nanobioscience 8 (1), 33-42, 2009
Evidence of no k-selection in gain spectra of quantum well AlGaAs laser diodes
P Landsberg, M Abrahams, M Osinski
IEEE journal of quantum electronics 21 (1), 24-28, 1985
Effective thermal conductivity analysis of 1.55 mu m InGaAsP/InP vertical-cavity top-surface-emitting microlasers
M Osinski, W Nakwaski
Electronics Letters 29 (11), 1015-1016, 1993
Multiple feedback effects in asymmetric external cavity semiconductor lasers
DS Seo, JD Park, JG Mcinerney, M Osinski
IEEE journal of quantum electronics 25 (11), 2229-2238, 1989
Novel wavelength-resonant optoelectronic structure and its application to surface-emitting semiconductor lasers
MYA Raja, SRJ Brueck, M Osiński, CF Schaus, JG McInerney, ...
Electronics Letters 24 (18), 1140-1142, 1988
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