| Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm J Muszalski Electronics Letters 40 (7), 428, 2004 | 66 | 2004 |
| 77 K operation of AlGaAs/GaAs quantum cascade laser at 9 um K Kosiel, M Bugajski, A Szerling, J Kubacka-Traczyk, P Karbownik, ... Photonics Letters of Poland 1 (1), 16-18, 2009 | 59 | 2009 |
| The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods A Jasik, A Wnuk, J Gaca, M Wójcik, A Wójcik-Jedlińska, J Muszalski, ... Journal of Crystal Growth 311 (19), 4423-4432, 2009 | 54 | 2009 |
| The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells P Perlin, W Trzeciakowski, E Litwin-Staszewska, J Muszalski, M Micovic Semiconductor science and technology 9 (12), 2239, 1994 | 44 | 1994 |
| Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures K Kosiel, J Kubacka-Traczyk, P Karbownik, A Szerling, J Muszalski, ... Microelectronics Journal 40 (3), 565-569, 2009 | 42 | 2009 |
| MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers P Gutowski, I Sankowska, P Karbownik, D Pierścińska, O Serebrennikova, ... Journal of Crystal Growth 466, 22-29, 2017 | 40 | 2017 |
| Static phase diagrams of reconstructions for MBE-grown GaAs (001) and AlAs (001) surfaces K Regiński, J Muszalski, VV Preobrazhenskii, DI Lubyshev Thin Solid Films 267 (1-2), 54-57, 1995 | 39 | 1995 |
| Lattice dilation by free electrons in heavily doped GaAs: Si M Leszczynski, J Bak‐Misiuk, J Domagala, J Muszalski, M Kaniewska, ... Applied physics letters 67 (4), 539-541, 1995 | 38 | 1995 |
| The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods A Jasik, A Wnuk, A Wójcik-Jedlińska, R Jakieła, J Muszalski, W Strupiński, ... Journal of crystal growth 310 (11), 2785-2792, 2008 | 35 | 2008 |
| Highly efficient heat extraction by double diamond heat-spreaders applied to a vertical external cavity surface-emitting laser A Broda, A Kuźmicz, G Rychlik, K Chmielewski, A Wójcik-Jedlińska, ... Optical and Quantum Electronics 49, 1-7, 2017 | 21 | 2017 |
| Membrane external-cavity surface-emitting laser emitting at 1640 nm B Jeżewski, A Broda, I Sankowska, A Kuźmicz, K Gołaszewska-Malec, ... Optics Letters 45 (2), 539-542, 2020 | 20 | 2020 |
| MBE growth of planar microcavities with distributed Bragg reflectors K Regiński, J Muszalski, M Bugajski, T Ochalski, JM Kubica, M Zbroszczyk, ... Thin Solid Films 367 (1-2), 290-294, 2000 | 19 | 2000 |
| Pyrometric interferometry during MBE growth of laser heterostructures J Muszalski Thin Solid Films 367 (1-2), 299-301, 2000 | 17 | 2000 |
| Switchable double wavelength generating vertical external cavity surface-emitting laser J Muszalski, A Broda, A Trajnerowicz, A Wójcik-Jedlińska, RP Sarzała, ... Optics Express 22 (6), 6447-6452, 2014 | 16 | 2014 |
| Recent advances in InGaAs detector technology J Kaniewski, J Muszalski, J Piotrowski physica status solidi (a) 201 (10), 2281-2287, 2004 | 16 | 2004 |
| Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation A Jasik, J Muszalski, K Pierściński, M Bugajski, VG Talalaev, M Kosmala Journal of Applied Physics 106 (5), 2009 | 15 | 2009 |
| Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures A Wójcik, TJ Ochalski, J Muszalski, E Kowalczyk, K Goszczyński, ... Thin Solid Films 412 (1-2), 114-121, 2002 | 15 | 2002 |
| High-power 1770 nm emission of a membrane external-cavity surface-emitting laser A Broda, B Jeżewski, M Szymański, J Muszalski IEEE Journal of Quantum Electronics 57 (1), 1-6, 2020 | 14 | 2020 |
| Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 µm infrared radiation J Kaniewski, J Muszalski, J Pawluczyk, J Piotrowski Infrared Technology and Applications XXXI 5783, 47-56, 2005 | 12 | 2005 |
| The effect of the MBE growth rate on the surface phase diagram for GaAs (001) VV Preobrazhenskii, DI Lubyshev, K Regiński, J Muszalski Thin Solid Films 267 (1-2), 51-53, 1995 | 12 | 1995 |
