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Kai Ni
Tytuł
Cytowane przez
Cytowane przez
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Ferroelectric FET analog synapse for acceleration of deep neural network training
M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta
2017 IEEE international electron devices meeting (IEDM), 6.2. 1-6.2. 4, 2017
5082017
The era of hyper-scaling in electronics
S Salahuddin, K Ni, S Datta
Nature electronics 1 (8), 442-450, 2018
4782018
Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance
K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ...
IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018
3112018
Ferroelectric ternary content-addressable memory for one-shot learning
K Ni, X Yin, AF Laguna, S Joshi, S Dünkel, M Trentzsch, J Müller, S Beyer, ...
Nature Electronics 2 (11), 521-529, 2019
2742019
A circuit compatible accurate compact model for ferroelectric-FETs
K Ni, M Jerry, JA Smith, S Datta
2018 IEEE symposium on VLSI technology, 131-132, 2018
1792018
A ferroelectric field effect transistor based synaptic weight cell
M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ...
Journal of Physics D: Applied Physics 51 (43), 434001, 2018
1332018
An ultra-dense 2FeFET TCAM design based on a multi-domain FeFET model
X Yin, K Ni, D Reis, S Datta, M Niemier, XS Hu
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (9), 1577-1581, 2018
1152018
SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications
K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018
1062018
Exploiting hybrid precision for training and inference: A 2T-1FeFET based analog synaptic weight cell
X Sun, P Wang, K Ni, S Datta, S Yu
2018 IEEE international electron devices meeting (IEDM), 3.1. 1-3.1. 4, 2018
1012018
FeCAM: A universal compact digital and analog content addressable memory using ferroelectric
X Yin, C Li, Q Huang, L Zhang, M Niemier, XS Hu, C Zhuo, K Ni
IEEE Transactions on Electron Devices 67 (7), 2785-2792, 2020
952020
Write disturb in ferroelectric FETs and its implication for 1T-FeFET AND memory arrays
K Ni, X Li, JA Smith, M Jerry, S Datta
IEEE Electron Device Letters 39 (11), 1656-1659, 2018
932018
Time-resolved measurement of negative capacitance
P Sharma, J Zhang, K Ni, S Datta
IEEE Electron Device Letters 39 (2), 272-275, 2017
892017
Computing with ferroelectric FETs: Devices, models, systems, and applications
A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018
862018
A comprehensive model for ferroelectric FET capturing the key behaviors: Scalability, variation, stochasticity, and accumulation
S Deng, G Yin, W Chakraborty, S Dutta, S Datta, X Li, K Ni
2020 IEEE symposium on VLSI technology, 1-2, 2020
752020
Supervised learning in all FeFET-based spiking neural network: Opportunities and challenges
S Dutta, C Schafer, J Gomez, K Ni, S Joshi, S Datta
Frontiers in neuroscience 14, 634, 2020
722020
Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO
AK Saha, K Ni, S Dutta, S Datta, S Gupta
Applied Physics Letters 114 (20), 2019
702019
Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs
K Ni, W Chakraborty, J Smith, B Grisafe, S Datta
2019 Symposium on VLSI Technology, T40-T41, 2019
672019
A scalable design of multi-bit ferroelectric content addressable memory for data-centric computing
C Li, F Müller, T Ali, R Olivo, M Imani, S Deng, C Zhuo, T Kämpfe, X Yin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 29.3. 1-29.3. 4, 2020
642020
Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array
D Reis, K Ni, W Chakraborty, X Yin, M Trentzsch, SD Dünkel, T Melde, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
642019
Ferroelectronics for edge intelligence
A Keshavarzi, K Ni, W Van Den Hoek, S Datta, A Raychowdhury
Ieee Micro 40 (6), 33-48, 2020
602020
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