| Temperature effect on the electrical properties of chromium oxide (Cr2O3) thin films M Julkarnain, J Hossain, KS Sharif, KA Khan Journal of Optoelectronics and Advanced Materials 13 (5), 485, 2011 | 51 | 2011 |
| Enhancement in efficiency of CZTS solar cell by using CZTSe BSF layer MS Rana, MM Islam, M Julkarnain Solar Energy 226, 272-287, 2021 | 46 | 2021 |
| Optical properties of thermally evaporated Cr2O3 thin films M Julkarnain, J Hossain, KS Sharif, KA Khan Canadian Journal on Chemical Engineering & Technology 3 (4), 81-85, 2012 | 45 | 2012 |
| Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence M Julkarnain, N Kamata, T Fukuda, Y Arakawa Optical Materials 60, 481-486, 2016 | 40 | 2016 |
| A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence M Julkarnain, T Fukuda, N Kamata, Y Arakawa Applied Physics Letter 107 (21), 212102, 2015 | 22 | 2015 |
| BER performance analysis of a real data communication through WiMAX-PHY layer over an AWGN and fading channels MA Islam, MA Kader, M Julkarnain International Journal of Electrical & Computer Sciences IJECS-IJENS 10 (04 …, 2010 | 21 | 2010 |
| Optical properties of e-beam evaporated Indium Selenide (InSe) thin films J Hossain, M Julkarnain, KS Sharif, KA Khan Journal of Scientific Research and Reports 3 (12), 1642-1655, 2014 | 15 | 2014 |
| Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence N Kamata, AZMT Islam, M Julkarnain, N Murakoshi, T Fukuda, ... Physica Status Solidi (b) 252 (5), 936-939, 2015 | 12 | 2015 |
| Passivation of Porous Silicon by LaF3 using a Simple Single-Source Chemical Bath Technique AA Mortuza, MH Rahman, SS Mou, M Julkernain, ABM Ismail International Journal of Materials and Chemistry 2 (3), 111-115, 2012 | 11 | 2012 |
| Opto-transport properties of e-beam evaporated annealed CuInSe2 thin films MA Islam, AMMT Karim, M Julkarnain, AKM Badrul, MKR Khan, KA Khan Surfaces and Interfaces 8, 170-175, 2017 | 10 | 2017 |
| Unveiling the Electrical and thermoelectric properties of highly degenerate indium selenide thin films: Indication of In3Se4 phase J Hossain, M Julkarnain, BK Mondal, MA Newaz, KA Khan Materials Research Express 6 (12), 126421, 2019 | 9 | 2019 |
| Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films MA Islam, RC Roy, J Hossain, M Julkarnain, KA Khan Materials Research 20, 102-108, 2016 | 9 | 2016 |
| Crystallization of e-beam evaporated amorphous InSe thin films after heat-treatment J Hossain, M Julkarnain, KS Sharif, KA Khan International Journal of Renewable Energy Technology Research (IJRETR) 2 (9 …, 2013 | 9 | 2013 |
| Preparation and Properties of Indium Selenide (InSe) Thin Films for Selective Surface Applications J Hossain, M Julkarnain, KS Sharif, KA Khan Journal of Physical Science and Application 1 (1), 37-43, 2011 | 8 | 2011 |
| Preparation and Properties of Chemically Reduced Cu and Ag Nanoparticles M Julkarnain, AK Mondal, MM Rahman, MS Rana | 7 | 2014 |
| High near-infrared transmittance, high intense orange luminescence in vanadium doped indium oxide (V: In2O3) thin films deposited by electron beam evaporation MA Islam, JR Mou, RC Roy, J Hossain, M Julkarnain, KA Khan Optik 157, 208-216, 2018 | 5 | 2018 |
| Dominant nonradiative centers in InGaN single quantum well by time-resolved and two-wavelength excited photoluminescence M Julkarnain, N Murakoshi, AZMT Islam, T Fukuda, N Kamata, Y Arakawa International Workshop on Nitride Semiconductors (IWN2014), Wroclaw, Poland …, 2014 | 5 | 2014 |
| Preparation and characterization of electron-beam evaporated Cu-InSe thin films using two stage processes MA Islam, M Nuruzzaman, RC Roy, J Hossain, M Julkarnain, KA Khan Journal of Physical Science and Application 6 (3), 37-43, 2016 | 4 | 2016 |
| Below‐gap emission bands in undoped GaN and its excitation density dependence M Julkarnain, T Fukuda, N Kamata, Y Arakawa physica status solidi (c) 13 (5-6), 242-244, 2016 | 4 | 2016 |
| Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation MD Haque, M Julkarnain, AZMT Islam, N Kamata Advances in Materials Physics and Chemistry 8 (3), 143-155, 2018 | 3 | 2018 |
Khairul Alam KhanProfessor, Department of Applied Physics and Electronic Engineering, University of Rajshahi; andVerified email at ru.ac.bd
