| Sublimation growth of AlN bulk crystals in Ta crucibles EN Mokhov, OV Avdeev, IS Barash, TY Chemekova, AD Roenkov, ... Journal of Crystal Growth 281 (1), 93-100, 2005 | 138 | 2005 |
| On mechanisms of sublimation growth of AlN bulk crystals AS Segal, SY Karpov, YN Makarov, EN Mokhov, AD Roenkov, MG Ramm, ... Journal of crystal growth 211 (1-4), 68-72, 2000 | 113 | 2000 |
| Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE E Richter, C Hennig, M Weyers, F Habel, JD Tsay, WY Liu, P Brückner, ... Journal of crystal growth 277 (1-4), 6-12, 2005 | 100 | 2005 |
| Experimental and theoretical analysis of sublimation growth of AlN bulk crystals YN Makarov, OV Avdeev, IS Barash, DS Bazarevskiy, TY Chemekova, ... Journal of Crystal Growth 310 (5), 881-886, 2008 | 88 | 2008 |
| Hydrogen effects in III-nitride MOVPE EV Yakovlev, RA Talalaev, AS Segal, AV Lobanova, WV Lundin, ... Journal of Crystal Growth 310 (23), 4862-4866, 2008 | 66 | 2008 |
| Sublimation growth of 2 inch diameter bulk AlN crystals TY Chemekova, OV Avdeev, IS Barash, EN Mokhov, SS Nagalyuk, ... physica status solidi c 5 (6), 1612-1614, 2008 | 66 | 2008 |
| Optimization of sublimation growth of SiC bulk crystals using modeling MS Ramm, EN Mokhov, SE Demina, MG Ramm, AD Roenkov, ... Materials Science and Engineering: B 61, 107-112, 1999 | 53 | 1999 |
| Surface chemistry and transport effects in GaN hydride vapor phase epitaxy AS Segal, AV Kondratyev, SY Karpov, D Martin, V Wagner, M Ilegems Journal of crystal growth 270 (3-4), 384-395, 2004 | 52 | 2004 |
| Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas AS Segal, AN Vorob'ev, SY Karpov, EN Mokhov, MG Ramm, MS Ramm, ... Journal of crystal growth 208 (1-4), 431-441, 2000 | 47 | 2000 |
| Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container YE Egorov, AO Galyukov, SG Gurevich, Y Makarov, EN Mokhov, ... Materials Science Forum 264, 61-64, 1997 | 43 | 1997 |
| Characterization of bulk AlN crystals with positron annihilation spectroscopy F Tuomisto, JM Mäki, TY Chemekova, YN Makarov, OV Avdeev, ... Journal of crystal growth 310 (17), 3998-4001, 2008 | 39 | 2008 |
| Method and apparatus for growing aluminum nitride monocrystals Y Vodakov, S Karpov, Y Makarov, E Mokhov, M Ramm, A Roenkov, ... US Patent App. 10/067,631, 2002 | 38 | 2002 |
| Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach M Dauelsberg, D Brien, R Püsche, O Schön, EV Yakovlev, AS Segal, ... Journal of crystal growth 315 (1), 224-228, 2011 | 28 | 2011 |
| Transport phenomena in sublimation growth of SiC bulk crystals AS Segal, AN Vorob’ev, SY Karpov, YN Makarov, EN Mokhov, MG Ramm, ... Materials Science and Engineering: B 61, 40-43, 1999 | 24 | 1999 |
| On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors M Dauelsberg, D Brien, H Rauf, F Reiher, J Baumgartl, O Häberlen, ... Journal of crystal growth 393, 103-107, 2014 | 21 | 2014 |
| AlInN MOVPE: growth chemistry and analysis of trends AV Lobanova, AS Segal, EV Yakovlev, RA Talalaev Journal of crystal growth 352 (1), 199-202, 2012 | 20 | 2012 |
| Growth of bulk aluminum nitride crystals H Helava, SJ Davis, GD Huminic, MG Ramm, OV Avdeev, IS Barash, ... physica status solidi c 4 (7), 2281-2284, 2007 | 15 | 2007 |
| Modeling analysis of AlN and AlGaN HVPE AS Segal, DS Bazarevskiy, MV Bogdanov, EV Yakovlev physica status solidi c 6 (S2 2), S329-S332, 2009 | 14 | 2009 |
| Effect of reactive ambient on AlN sublimation growth SY Karpov, AV Kulik, AS Segal, MS Ramm, YN Makarov physica status solidi (a) 188 (2), 763-767, 2001 | 14 | 2001 |
| Growth of AlN bulk crystals by sublimation sandwich method EN Mokhov, AD Roenkov, YA Vodakov, SY Karpov, MS Ramm, AS Segal, ... Materials Science Forum 433, 979-982, 2003 | 12 | 2003 |
