| Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015 | 989 | 2015 |
| Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang Advanced Energy Materials 4 (16), 1400610, 2014 | 334 | 2014 |
| Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 303 | 2017 |
| Grain size engineering for ferroelectric Hf0. 5Zr0. 5O2 films by an insertion of Al2O3 interlayer HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ... Applied Physics Letters 105 (19), 2014 | 241 | 2014 |
| A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ... Nanoscale 8 (3), 1383-1389, 2016 | 237 | 2016 |
| Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ... Journal of Materials Chemistry C 4 (28), 6864-6872, 2016 | 212 | 2016 |
| Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1− xO2 films MH Park, HJ Kim, YJ Kim, T Moon, K Do Kim, CS Hwang Nano Energy 12, 131-140, 2015 | 207 | 2015 |
| Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ... Nanoscale 10 (2), 716-725, 2018 | 196 | 2018 |
| Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ... ACS applied materials & interfaces 8 (24), 15466-15475, 2016 | 194 | 2016 |
| Study on the degradation mechanism of the ferroelectric properties of thin Hf0. 5Zr0. 5O2 films on TiN and Ir electrodes MH Park, HJ Kim, YJ Kim, W Lee, T Moon, KD Kim, CS Hwang Applied Physics Letters 105 (7), 2014 | 173 | 2014 |
| Study on the size effect in Hf0. 5Zr0. 5O2 films thinner than 8 nm before and after wake-up field cycling MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, CS Hwang Applied Physics Letters 107 (19), 2015 | 154 | 2015 |
| Giant Negative Electrocaloric Effects of Hf0.5 Zr0.5 O2 Thin Films. MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang Advanced Materials (Deerfield Beach, Fla.) 28 (36), 7956-7961, 2016 | 127 | 2016 |
| Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors K Do Kim, YH Lee, T Gwon, YJ Kim, HJ Kim, T Moon, SD Hyun, HW Park, ... Nano Energy 39, 390-399, 2017 | 106 | 2017 |
| Preparation and characterization of ferroelectric Hf0. 5Zr0. 5O2 thin films grown by reactive sputtering YH Lee, HJ Kim, T Moon, K Do Kim, SD Hyun, HW Park, YB Lee, MH Park, ... Nanotechnology 28 (30), 305703, 2017 | 100 | 2017 |
| Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang Journal of Materials Chemistry C 3 (24), 6291-6300, 2015 | 100 | 2015 |
| Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers YJ Kim, H Yamada, T Moon, YJ Kwon, CH An, HJ Kim, KD Kim, YH Lee, ... Nano letters 16 (7), 4375-4381, 2016 | 91 | 2016 |
| A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices MH Park, HJ Kim, G Lee, J Park, YH Lee, YJ Kim, T Moon, KD Kim, ... Applied Physics Reviews 6 (4), 2019 | 89 | 2019 |
| Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, SD Hyun, CS Hwang ACS applied materials & interfaces 10 (49), 42666-42673, 2018 | 77 | 2018 |
| Voltage drop in a ferroelectric single layer capacitor by retarded domain nucleation YJ Kim, HW Park, SD Hyun, HJ Kim, KD Kim, YH Lee, T Moon, YB Lee, ... Nano letters 17 (12), 7796-7802, 2017 | 72 | 2017 |
| Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ... Advanced Electronic Materials 5 (2), 1800436, 2019 | 68 | 2019 |
