High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ...
Nature communications 3 (1), 1-7, 2012
1511 2012 High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ...
Advanced materials 24 (43), 5832-5836, 2012
984 2012 Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 1-7, 2012
972 2012 Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee
Nano letters 13 (5), 1983-1990, 2013
904 2013 Two-dimensional semiconductors for transistors M Chhowalla, D Jena, H Zhang
Nature Reviews Materials 1 (11), 1-15, 2016
847 2016 Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ...
ACS nano 7 (2), 1072-1080, 2013
737 2013 Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 092109, 2007
737 2007 Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee
Physical Review X 4 (3), 031005, 2014
698 2014 Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
669 2018 Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena
Science 327 (5961), 60-64, 2010
666 2010 High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
ACS nano 7 (6), 5446-5452, 2013
505 2013 Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering D Jena, A Konar
Physical review letters 98 (13), 136805, 2007
463 2007 Charge scattering and mobility in atomically thin semiconductors N Ma, D Jena
Physical Review X 4 (1), 011043, 2014
377 2014 InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
366 2012 High-voltage field effect transistors with wide-bandgap β -Ga2 O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
328 2014 Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors A Konar, T Fang, D Jena
Physical Review B 82 (11), 115452, 2010
321 2010 Polarization effects in semiconductors: from ab initio theory to device applications C Wood, D Jena
Springer Science & Business Media, 2007
321 2007 Dislocation scattering in a two-dimensional electron gas D Jena, A Gossard, U Mishra
Applied Physics Letters 76, 1707-1709, 2000
312 * 2000 Dislocation scattering in a two-dimensional electron gas D Jena, A Gossard, U Mishra
Applied Physics Letters 76, 1707, 2000
312 * 2000 Dislocation scattering in a two-dimensional electron gas UKM D. Jena, A. C. Gossard
Applied Physics Letters 76, 1707, 2000
312 * 2000 