Follow
Hervé FOLLIOT
Hervé FOLLIOT
professor, dean of research, INSA de Rennes, Institut FOTON, CNRS
Verified email at insa-rennes.fr
Title
Cited by
Cited by
Year
Semiconductor photodetector
J Hegarty, LP Barry, HAF Folliot, JC O'gorman
US Patent 7,557,368, 2009
2372009
High-gain and low-threshold InAs quantum-dot lasers on InP
P Caroff, C Paranthoen, C Platz, O Dehaese, H Folliot, N Bertru, C Labbe, ...
Applied Physics Letters 87 (24), 243107, 2005
1562005
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
C Paranthoen, C Platz, G Moreau, N Bertru, O Dehaese, A Le Corre, ...
Journal of crystal growth 251 (1-4), 230-235, 2003
742003
Structural and electronic properties of BAs and BxGa1− xAs, BxIn1− xAs alloys
N Chimot, J Even, H Folliot, S Loualiche
Physica B: Condensed Matter 364 (1-4), 263-272, 2005
702005
Tuned red NIR phosphorescence of polyurethane hybrid composites embedding metallic nanoclusters for oxygen sensing
M Amela-Cortes, S Paofai, S Cordier, H Folliot, Y Molard
Chemical Communications 51 (38), 8177-8180, 2015
632015
Two-photon-induced photoconductivity enhancement in semiconductor microcavities: A theoretical investigation
H Folliot, M Lynch, AL Bradley, T Krug, LA Dunbar, J Hegarty, ...
JOSA B 19 (10), 2396-2402, 2002
612002
Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
P Miska, C Paranthoen, J Even, O Dehaese, H Folliot, N Bertru, ...
Semiconductor science and technology 17 (10), L63, 2002
532002
Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities
H Folliot, M Lynch, AL Bradley, LA Dunbar, J Hegarty, JF Donegan, ...
Applied Physics Letters 80 (8), 1328-1330, 2002
512002
Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection
C Platz, C Paranthoën, P Caroff, N Bertru, C Labbé, J Even, O Dehaese, ...
Semiconductor science and technology 20 (5), 459, 2005
482005
Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
H Folliot, S Loualiche, B Lambert, V Drouot, A Le Corre
Physical Review B 58 (16), 10700, 1998
481998
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
C Robert, C Cornet, P Turban, TN Thanh, MO Nestoklon, J Even, ...
Physical Review B 86 (20), 205316, 2012
452012
Achievement of high density InAs quantum dots on InP (311) B substrate emitting at 1.55 µm
P Caroff, N Bertru, A Le Corre, O Dehaese, T Rohel, I Alghoraibi, H Folliot, ...
Japanese Journal of Applied Physics 44 (8L), L1069, 2005
452005
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ...
Applied Physics Letters 98 (25), 251110, 2011
442011
Approach to wetting-layer-assisted lateral coupling of In As∕ In P quantum dots
C Cornet, C Platz, P Caroff, J Even, C Labbé, H Folliot, A Le Corre, ...
Physical Review B 72 (3), 035342, 2005
422005
Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range
M Guézo, S Loualiche, J Even, A Le Corre, H Folliot, C Labbé, O Dehaese, ...
Applied Physics Letters 82 (11), 1670-1672, 2003
422003
Design and Integration in Electro‐Optic Devices of Highly Efficient and Robust Red‐NIR Phosphorescent Nematic Hybrid Liquid Crystals Containing [Mo6I8 (OCOCnF2n+ 1) 6] 2−(n= 1 …
M Prévôt, M Amela‐Cortes, SK Manna, R Lefort, S Cordier, H Folliot, ...
Advanced Functional Materials 25 (31), 4966-4975, 2015
412015
Room temperature photoluminescence of high density (In, Ga) As/GaP quantum dots
T Nguyen Thanh, C Robert, C Cornet, M Perrin, JM Jancu, N Bertru, ...
Applied Physics Letters 99 (14), 143123, 2011
342011
Quantitative investigations of optical absorption in quantum dots emitting at wavelength
C Cornet, C Labbé, H Folliot, N Bertru, O Dehaese, J Even, A Le Corre, ...
Applied physics letters 85 (23), 5685-5687, 2004
342004
Time-resolved pump probe of quantum dots under high resonant excitation
C Cornet, C Labbé, H Folliot, P Caroff, C Levallois, O Dehaese, J Even, ...
Applied Physics Letters 88 (17), 171502, 2006
312006
switching time of Fe-doped quantum well saturable absorbers in a microcavity in range
M Gicquel-Guézo, S Loualiche, J Even, C Labbé, O Dehaese, A Le Corre, ...
Applied Physics Letters 85 (24), 5926-5928, 2004
312004
The system can't perform the operation now. Try again later.
Articles 1–20