MOCVD growth of Hg₁₋ xCdxTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Kłos, M Romanis, M Grudzień, ... Opto-Electronics Review 12 (4), 453-458, 2004 | 65* | 2004 |
Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Kłos, J Pawluczyk, J Rutkowski, ... Infrared physics & technology 49 (3), 173-182, 2007 | 63 | 2007 |
Uncooled infrared photodetectors in Poland J Piotrowski, A Piotrowski Infrared Photoelectronics 5957, 117-128, 2005 | 43 | 2005 |
Uncooled infrared photodetectors in Poland J Piotrowski, A Piotrowski Infrared Photoelectronics 5957, 117-128, 2005 | 43 | 2005 |
Growth and properties of MOCVD HgCdTe epilayers on GaAs substrates J RUTKOWSKI, J PIOTROWSKI, A Rogalski Opto-Electronics Review 13 (3), 239-251, 2005 | 40 | 2005 |
Dark currents, responsivity, and response time in graded gap HgCdTe structures J Piotrowski, W Gawron, Z Orman, J Pawluczyk, K Klos, D Stepien, ... Infrared Technology and Applications XXXVI 7660, 967-974, 2010 | 32 | 2010 |
Room temperature IR photodetectors J Piotrowski, A Piotrowski Mercury Cadmium Telluride: Growth, Properties and Applications, 513-537, 2010 | 30 | 2010 |
Room temperature IR photodetectors J Piotrowski, A Piotrowski Mercury Cadmium Telluride: Growth, Properties and Applications, 513-537, 2010 | 30 | 2010 |
Uncooled or minimally cooled 10-µm photodetectors with sub-nanosecond response time A Piotrowski, K Kłos, W Gawron, J Pawluczyk, Z Orman, J Piotrowski Infrared Technology and Applications XXXIII 6542, 497-507, 2007 | 27 | 2007 |
Mid and long infrared detection modules for picosecond range measurements D Stanaszek, J Piotrowski, A Piotrowski, W Gawron, Z Orman, R Paliwoda, ... Electro-Optical Remote Sensing, Photonic Technologies, and Applications III …, 2009 | 24 | 2009 |
Metal-Organic Chemical Vapor Deposition of Hg1− x Cd x Te Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors A Piotrowski, K Kłos Journal of Electronic Materials 36 (8), 1052-1058, 2007 | 24 | 2007 |
MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ... Semiconductor science and technology 28 (10), 105017, 2013 | 23 | 2013 |
Uncooled MWIR and LWIR photodetectors in Poland J Piotrowski, J Pawluczyk, A Piotrowski, W Gawron, M Romanis, K Kłos Opto-Electronics Review 18 (3), 318-327, 2010 | 21 | 2010 |
Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Kłos, J Pawluczyk, M Grudzień, ... Bulletin of the Polish Academy of Sciences: Technical Sciences, 139-149-139-149, 2005 | 21 | 2005 |
Control of acceptor doping in MOCVD HgCdTe epilayers P Madejczyk, A Piotrowski, K Kłos, W Gawron, J Rutkowski, A Rogalski Opto-electronics review 18 (3), 271-276, 2010 | 20 | 2010 |
Surface smoothness improvement of HgCdTe layers grown by MOCVD W Gawron, P Madejczyk, K Kłos, J Rutkowski, A Piotrowski, A Rogalski, ... Bulletin of the Polish Academy of Sciences: Technical Sciences 57 (2), 2009 | 20 | 2009 |
Improvement in performance of high-operating temperature HgCdTe photodiodes P Madejczyk, W Gawron, A Piotrowski, K Kłos, J Rutkowski, A Rogalski Infrared Physics & Technology 54 (3), 310-315, 2011 | 19 | 2011 |
Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes K Jóźwikowski, J Piotrowski, W Gawron, A Rogalski, A Piotrowski, ... Journal of electronic materials 38 (8), 1666-1676, 2009 | 17 | 2009 |
Extension of usable spectral range of Peltier cooled photodetectors A Piotrowski, J Piotrowski, W Gawron, J Pawluczyk, M Pedzinska Acta Physica Polonica A 116 (S), 2009 | 14 | 2009 |
MOCVD HgCdTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Klos, J Pawluczyk, M Grudzien, ... Quantum Sensing and Nanophotonic Devices II 5732, 273-284, 2005 | 14 | 2005 |