| MOCVD growth of Hg~ 1~-~ xCd~ xTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Klos, M Romanis, M Grudzien, ... OPTOELECTRONICS REVIEW 12 (4), 453, 2004 | 65* | 2004 |
| MOCVD growth of Hg~ 1~-~ xCd~ xTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Klos, M Romanis, M Grudzien, ... OPTOELECTRONICS REVIEW 12 (4), 453, 2004 | 65* | 2004 |
| Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Kłos, J Pawluczyk, J Rutkowski, ... Infrared physics & technology 49 (3), 173-182, 2007 | 56 | 2007 |
| Uncooled infrared photodetectors in Poland J Piotrowski, A Piotrowski Infrared Photoelectronics 5957, 59570K, 2005 | 44 | 2005 |
| Uncooled infrared photodetectors in Poland J Piotrowski, A Piotrowski Infrared Photoelectronics 5957, 59570K, 2005 | 44 | 2005 |
| Growth and properties of MOCVD HgCdTe epilayers on GaAs substrates J RUTKOWSKI, J PIOTROWSKI, A Rogalski Opto-Electronics Review 13 (3), 239-251, 2005 | 39 | 2005 |
| Dark currents, responsivity, and response time in graded gap HgCdTe structures J Piotrowski, W Gawron, Z Orman, J Pawluczyk, K Klos, D Stepien, ... Infrared Technology and Applications XXXVI 7660, 766031, 2010 | 28 | 2010 |
| Uncooled or minimally cooled 10-µm photodetectors with sub-nanosecond response time A Piotrowski, K Kłos, W Gawron, J Pawluczyk, Z Orman, J Piotrowski Infrared Technology and Applications XXXIII 6542, 65421B, 2007 | 25 | 2007 |
| Room temperature IR photodetectors J Piotrowski, A Piotrowski Mercury Cadmium Telluride: Growth, Properties and Applications, 513-537, 2010 | 24 | 2010 |
| Room temperature IR photodetectors J Piotrowski, A Piotrowski Mercury Cadmium Telluride: Growth, Properties and Applications, 513-537, 2010 | 24 | 2010 |
| Metal-Organic Chemical Vapor Deposition of Hg1−xCdxTe Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors A Piotrowski, K Kłos Journal of electronic materials 36 (8), 1052-1058, 2007 | 23 | 2007 |
| Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors A Piotrowski, P Madejczyk, W Gawron, K Kłos, J Pawluczyk, M Grudzień, ... Bulletin of the Polish Academy of Sciences: Technical Sciences, 139-149, 2005 | 22 | 2005 |
| MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ... Semiconductor science and technology 28 (10), 105017, 2013 | 20 | 2013 |
| Mid and long infrared detection modules for picosecond range measurements D Stanaszek, J Piotrowski, A Piotrowski, W Gawron, Z Orman, R Paliwoda, ... Electro-Optical Remote Sensing, Photonic Technologies, and Applications III …, 2009 | 20 | 2009 |
| Improvement in performance of high-operating temperature HgCdTe photodiodes P Madejczyk, W Gawron, A Piotrowski, K Kłos, J Rutkowski, A Rogalski Infrared Physics & Technology 54 (3), 310-315, 2011 | 19 | 2011 |
| Control of acceptor doping in MOCVD HgCdTe epilayers P Madejczyk, A Piotrowski, K Kłos, W Gawron, J Rutkowski, A Rogalski Opto-electronics review 18 (3), 271-276, 2010 | 18 | 2010 |
| Uncooled MWIR and LWIR photodetectors in Poland J Piotrowski, J Pawluczyk, A Piotrowski, W Gawron, M Romanis, K Kłos Opto-Electronics Review 18 (3), 318-327, 2010 | 17 | 2010 |
| Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes K Jóźwikowski, J Piotrowski, W Gawron, A Rogalski, A Piotrowski, ... Journal of electronic materials 38 (8), 1666-1676, 2009 | 17 | 2009 |
| Surface smoothness improvement of HgCdTe layers grown by MOCVD W Gawron, P Madejczyk, K Kłos, J Rutkowski, A Piotrowski, A Rogalski, ... Bulletin of the Polish Academy of Sciences: Technical Sciences, 139-146, 2009 | 16 | 2009 |
| Extension of usable spectral range of Peltier cooled photodetectors A Piotrowski, J Piotrowski, W Gawron, J Pawluczyk, M Pedzinska Acta Physica Polonica A 116 (S), 2009 | 11 | 2009 |
Krzysztof KłosZweryfikowany adres z kklos.eu
