Monolayered MoSe2: a candidate for room temperature polaritonics N Lundt, A Maryński, E Cherotchenko, A Pant, X Fan, S Tongay, G Sęk, ...
2D Materials 4 (1), 015006, 2016
76 2016 Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures M Gawełczyk, M Syperek, A Maryński, P Mrowiński, K Gawarecki, ...
Physical Review B 96 (24), 245425, 2017
37 2017 Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot P Holewa, A Maryński, A Musiał, T Heuser, N Srocka, D Quandt, ...
Optics express 25 (25), 31122-31129, 2017
35 2017 Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy A Maryński, G Sęk, A Musiał, J Andrzejewski, J Misiewicz, C Gilfert, ...
Journal of Applied Physics 114 (9), 2013
33 2013 Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures A Musiał, A Maryński, P Mrowiński, J Andrzejewski, P Machnikowski, ...
Physical Review B 90 (12), 125424, 2014
31 2014 Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm P Mrowiński, A Musiał, A Maryński, M Syperek, J Misiewicz, A Somers, ...
Applied Physics Letters 106 (5), 2015
23 2015 Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
15 2018 Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission W Rudno-Rudziński, M Syperek, J Andrzejewski, A Maryński, J Misiewicz, ...
AIP Advances 7 (1), 2017
15 2017 Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range P Podemski, A Maryński, P Wyborski, A Bercha, W Trzeciakowski, G Sęk
Journal of Luminescence 212, 300-305, 2019
13 2019 Optical and Electronic Properties of Symmetric P Holewa, M Gawełczyk, A Maryński, P Wyborski, JP Reithmaier, G Sęk, ...
Physical Review Applied 14 (6), 064054, 2020
12 2020 Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures Ł Dusanowski, M Syperek, A Maryński, LH Li, J Misiewicz, S Höfling, ...
Applied Physics Letters 106 (23), 2015
11 2015 Interplay between emission wavelength and sp splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm P Podemski, A Musiał, K Gawarecki, A Maryński, P Gontar, A Bercha, ...
Applied Physics Letters 116 (2), 2020
8 2020 Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio A Musiał, G Sęk, A Marynski, P Podemski, J Misiewicz, A Löffler, S Höfling, ...
Acta Physica Polonica A 120 (5), 883-887, 2011
8 2011 Optimizing the InGaAs/GaAs quantum dots for 1.3 μm emission A Maryński, P Mrowiński, K Ryczko, P Podemski, K Gawarecki, A Musiał, ...
Acta Physica Polonica A 132 (2), 386-390, 2017
6 2017 Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells A Mika, G Sek, K Ryczko, M Kozub, A Musial, A Marynski, J Misiewicz, ...
Optica Applicata 43 (1), 2013
5 2013 Optical properties of site-selectively grown inas/inp quantum dots with predefined positioning by block copolymer lithography P Holewa, J Jasiński, A Shikin, E Lebedkina, A Maryński, M Syperek, ...
Materials 14 (2), 391, 2021
4 2021 Probing the carrier transfer processes in a self-assembled system with In0. 3Ga0. 7As/GaAs quantum dots by photoluminescence excitation spectroscopy P Podemski, M Pieczarka, A Maryński, J Misiewicz, A Löffler, S Höfling, ...
Superlattices and Microstructures 93, 214-220, 2016
3 2016 Interdash Coupling within Dense Ensembles of Quantum Dashes: Comparison of P Holewa, M Gawełczyk, A Maryński, K Ryczko, V Liverini, M Beck, J Faist, ...
Physical Review Applied 17 (5), 054028, 2022
2 2022 Lateral interdot coupling among dense ensemble of InAs quantum dots grown on InP substrate observed at cryogenic temperatures A Maryński, M Syperek, M Pieczarka, M Gawełczyk, J Misiewicz, V Liverini, ...
Journal of Physics: Conference Series 906 (1), 012008, 2017
1 2017 The issue of 0D-like ground state isolation in GaAs-and InP-based coupled quantum dots-quantum well systems M Syperek, J Andrzejewski, W Rudno-Rudziński, A Maryński, G Sȩk, ...
Journal of Physics: Conference Series 906 (1), 012019, 2017
1 2017 
Johann Peter ReithmaierInstitute of Nanostructure Technologies and Analytics (INA), University of KasselZweryfikowany adres z ina.uni-kassel.de
