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Alex Brice Poungoué Mbeunmi
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Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer
ABP Mbeunmi, M El-Gahouchi, R Arvinte, A Jaouad, R Cheriton, ...
Solar Energy Materials and Solar Cells 217, 110641, 2020
192020
Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse
N Paupy, ZO Elhmaidi, A Chapotot, T Hanuš, J Arias-Zapata, B Ilahi, ...
Nanoscale Advances 5 (18), 4696-4702, 2023
82023
Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor
ABP Mbeunmi, R Arvinte, H Pelletier, M Jellite, R Arès, S Fafard, ...
Journal of Crystal Growth 547, 125807, 2020
62020
Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates
TM Diallo, AB Poungoué Mbeunmi, M El-Gahouchi, M Jellite, R Arvinte, ...
Journal of Vacuum Science & Technology B 37 (3), 2019
52019
Epitaxial lift-off process for III-V solar cells by using porous germanium for substrate re-use
R Arvinte, S Cailleaux, ABP Mbeunmi, A Heintz, R Arès, A Boucherif
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 1976-1981, 2020
42020
Epitaxial growth of detachable GaAs/Ge heterostructure on mesoporous Ge substrate for layer separation and substrate reuse
N Paupy, B Ilahi, ZO Elhmaidi, V Daniel, T Hanuš, R Arvinte, A Heintz, ...
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 0430-0430, 2022
32022
High performance dual junction GaInP/GaAs for concentrator photovoltaic quad-junction
ABP Mbeunmi, A Turala, R Arvinte, A Jaouad, V Aimez, R Arès, ...
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 1936-1940, 2020
22020
Growth and Memory effect of Ge in GaAs epilayers grown in UHV environment using IBGe
ABP Mbeunmi, R Arvinte, MR Aziziyan, R Arès, S Fafard, A Boucherif
ECS Transactions 93 (1), 113, 2019
12019
PEELER process: wafer scale epitaxial layer release and substrate reuse
N Paupy, ZO Elhmaidi, A Chapotot, T Hanuš, J Arias-Zapata, B Ilahi, ...
Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM), 2022
2022
Development of dual junction GaInP/GaAs solar cells for high-performance concentrator photovoltaic quad-junction III-V/IV
ABP Mbeunmi, A Turala, R Arvinte, CE Validiva, K Hinzer, V Aimez, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X …, 2021
2021
Development of dual junction GaInP/GaAs solar cells for high-performance concentrator photovoltaic quad-junction III-V/IV
AB Poungoué Mbeunmi, A Turala, R Arvinte, CE Validiva, K Hinzer, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X …, 2021
2021
Croissance du GaInAs par épitaxie hybride et investigation de l’éffet mémoire du germanium dans un réacteur III-V CBE pour des applications optoélectroniques
ABP Mbeunmi
Université de Sherbrooke, 2020
2020
Hybrid MBE-CBE Growth and Characterization of Al 0.48 In 0.52 As on InP (100) for avalanche photodiode applications Motivation
TM Diallo, ABP Mbeunmi, M El-Gahouchi, M Jellite, R Arès, S Fafard, ...
North American Molecular Beam Epitaxy (NAMBE 2018), 2018
2018
Hybrid MBE-CBE Growth and Characterization of undoped In 0, 53 Ga 0, 47 As on Fe-InP (001) for avalanche photodiodes (APDs)
ABP Mbeunmi, TM Diallo, M El-Gahouchi, M Jellite, G Gommé, H Pelletier, ...
34th North American Conference on Molecular Beam Epitaxy (NAMBE 2018), 2018
2018
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