| On the bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ... Journal of Crystal Growth 404, 184-191, 2014 | 661 | 2014 |
| Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016 | 284 | 2016 |
| Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ... physica status solidi (a) 211 (1), 27-33, 2014 | 231 | 2014 |
| Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ... Applied Physics Letters 106 (24), 2015 | 188 | 2015 |
| Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ... Journal of Crystal Growth 401, 665-669, 2014 | 171 | 2014 |
| Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ... Journal of Materials Science 51, 3650-3656, 2016 | 157 | 2016 |
| Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ... Applied physics express 8 (1), 011101, 2014 | 130 | 2014 |
| On the nature and temperature dependence of the fundamental band gap of In2O3 K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ... physica status solidi (a) 211 (1), 54-58, 2014 | 122 | 2014 |
| Substrate-orientation dependence of β-Ga2O3 (100),(010),(001), and (2¯ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) P Mazzolini, A Falkenstein, C Wouters, R Schewski, T Markurt, Z Galazka, ... Apl Materials 8 (1), 2020 | 107 | 2020 |
| Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... Apl Materials 7 (2), 2019 | 103 | 2019 |
| Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ... Journal of Crystal Growth 486, 82-90, 2018 | 101 | 2018 |
| Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ... Journal of Applied Physics 120 (22), 2016 | 101 | 2016 |
| Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ... Journal of Crystal Growth 529, 125297, 2020 | 97 | 2020 |
| Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ... APL Materials 7 (2), 2019 | 96 | 2019 |
| Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ... Journal of Applied Physics 122 (16), 2017 | 96 | 2017 |
| Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ... Applied Physics Letters 116 (18), 2020 | 77 | 2020 |
| Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen APL Materials 7 (2), 2019 | 73 | 2019 |
| MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals Z Galazka, D Klimm, K Irmscher, R Uecker, M Pietsch, R Bertram, ... physica status solidi (a) 212 (7), 1455-1460, 2015 | 72 | 2015 |
| Static dielectric constant of β-Ga2O3 perpendicular to the principal planes (100),(010), and (001) A Fiedler, R Schewski, Z Galazka, K Irmscher ECS Journal of Solid State Science and Technology 8 (7), Q3083, 2019 | 68 | 2019 |
| Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner Semiconductor Science and Technology 30 (2), 024013, 2015 | 61 | 2015 |
Martin AlbrechtLeibniz-Institut für KristallzüchtungZweryfikowany adres z ikz-berlin.de
