On the bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ...
Journal of Crystal Growth 404, 184-191, 2014
661 2014 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped2 O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
585 2016 Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari
Journal of Applied Physics 110 (6), 2011
564 2011 Czochralski growth and characterization of β‐Ga2 O3 single crystals Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
517 2010 Experimental electronic structure of In2O3 and Ga2O3 C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ...
New Journal of Physics 13 (8), 085014, 2011
390 2011 Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method Z Galazka, R Uecker, D Klimm, K Irmscher, M Naumann, M Pietsch, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3007, 2016
367 2016 Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 M Mohamed, K Irmscher, C Janowitz, Z Galazka, R Manzke, R Fornari
Applied Physics Letters 101 (13), 2012
359 2012 Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
286 2016 Hydrogen-related deep levels in proton-bombarded silicon K Irmscher, H Klose, K Maass
Journal of Physics C: Solid State Physics 17 (35), 6317, 1984
180 1984 Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
171 2014 Semiconducting Sn-doped β-Ga2 O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
157 2016 On the nature and temperature dependence of the fundamental band gap of In2 O3 K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ...
physica status solidi (a) 211 (1), 54-58, 2014
122 2014 Formation of the I Pintilie, L Pintilie, K Irmscher, B Thomas
Applied physics letters 81 (25), 4841-4843, 2002
108 2002 Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
103 2019 Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
101 2018 Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 2016
101 2016 Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ...
Journal of Crystal Growth 529, 125297, 2020
97 2020 Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
97 2019 Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
96 2017 Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ...
CrystEngComm 18 (19), 3488-3497, 2016
81 2016 