On the bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ... Journal of Crystal Growth 404, 184-191, 2014 | 666 | 2014 |
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ... Applied physics express 8 (1), 011101, 2014 | 131 | 2014 |
On the nature and temperature dependence of the fundamental band gap of In2O3 K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ... physica status solidi (a) 211 (1), 54-58, 2014 | 123 | 2014 |
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... Apl Materials 7 (2), 2019 | 104 | 2019 |
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ... Journal of Applied Physics 120 (22), 2016 | 103 | 2016 |
Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN T Markurt, L Lymperakis, J Neugebauer, P Drechsel, P Stauss, T Schulz, ... Physical review letters 110 (3), 036103, 2013 | 88 | 2013 |
High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ... Advanced Materials 28 (36), 7978-7983, 2016 | 80 | 2016 |
Ultraviolet luminescence in AlN T Schulz, M Albrecht, K Irmscher, C Hartmann, J Wollweber, R Fornari physica status solidi (b) 248 (6), 1513-1518, 2011 | 69 | 2011 |
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ... Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021 | 59 | 2021 |
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells L Lymperakis, T Schulz, C Freysoldt, M Anikeeva, Z Chen, X Zheng, ... Physical Review Materials 2 (1), 011601, 2018 | 56 | 2018 |
The discrepancies between theory and experiment in the optical emission of monolayer In (Ga) N quantum wells revisited by transmission electron microscopy T Suski, T Schulz, M Albrecht, XQ Wang, I Gorczyca, K Skrobas, ... Applied Physics Letters 104 (18), 2014 | 56 | 2014 |
Effect of heat treatment on properties of melt-grown bulk In 2 O 3 single crystals Z Galazka, K Irmscher, M Pietsch, T Schulz, R Uecker, D Klimm, R Fornari CrystEngComm 15 (12), 2220-2226, 2013 | 46 | 2013 |
Impact of buffer growth on crystalline quality of GaN grown on Si (111) substrates P Drechsel, P Stauss, W Bergbauer, P Rode, S Fritze, A Krost, T Markurt, ... physica status solidi (a) 209 (3), 427-430, 2012 | 44 | 2012 |
Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy S Fritze, P Drechsel, P Stauss, P Rode, T Markurt, T Schulz, M Albrecht, ... Journal of Applied Physics 111 (12), 2012 | 41 | 2012 |
Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series T Schulz, T Remmele, T Markurt, M Korytov, M Albrecht Journal of Applied Physics 112 (3), 2012 | 40 | 2012 |
Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide M Albrecht, R Schewski, K Irmscher, Z Galazka, T Markurt, M Naumann, ... Journal of Applied Physics 115 (5), 2014 | 36 | 2014 |
Bulk β-Ga2O3 single crystals doped with Ce, Ce+ Si, Ce+ Al, and Ce+ Al+ Si for detection of nuclear radiation Z Galazka, R Schewski, K Irmscher, W Drozdowski, ME Witkowski, ... Journal of Alloys and Compounds 818, 152842, 2020 | 34 | 2020 |
In/GaN (0001)-(3× 3) R 30° adsorbate structure as a template for embedded (In, Ga) N/GaN monolayers and short-period superlattices C Chèze, F Feix, M Anikeeva, T Schulz, M Albrecht, H Riechert, O Brandt, ... Applied Physics Letters 110 (7), 2017 | 26 | 2017 |
Single-photon emission from isolated monolayer islands of InGaN X Sun, P Wang, T Wang, L Chen, Z Chen, K Gao, T Aoki, M Li, J Zhang, ... Light: Science & Applications 9 (1), 159, 2020 | 25 | 2020 |
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ... Physical Review B 92 (23), 235439, 2015 | 25 | 2015 |